View MJH6287_297162.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJH6284/D
Darlington Complementary Silicon Power Transistors
. . . designed for general-purpose amplifier and low-speed switching motor control applications. * Similar to the Popular NPN 2N6284 and the PNP 2N6287 * Rugged RBSOA Characteristics * Monolithic Construction with Built-in Collector-Emitter Diode
MJH6284 PNP MJH6287
Motorola Preferred Devices
NPN
DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS 160 WATTS
PD , POWER DISSIPATION (WATTS)
IIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIII I II II I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII II I I II II IIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII
MAXIMUM RATINGS
Rating Symbol VCEO VCB VEB IC IB Max 100 100 5.0 20 40 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Peak Base Current 0.5 Total Device Dissipation @ TC = 25_C Derate above 25_C PD Watts W/_C 160 1.28 Operating and Storage Junction Temperature Range TJ, Tstg - 65 to + 150
CASE 340D-02
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol RJC
Max
Unit
Thermal Resistance, Junction to Case
0.78
_C/W
160
140 120 100 80 60 40 20 0
0
25
50 75 100 125 150 TC, CASE TEMPERATURE (C)
175
200
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
(c) Motorola, Inc. 1998 Motorola Bipolar Power Transistor Device Data
1
III I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I II I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
MJH6284 MJH6287
(1) Pulse test: Pulse Width = 300 s, Duty Cycle = 2.0%. SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
V1 APPROX - 8.0 V
V2 APPROX +12 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPES, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA
Fall Time
Storage Time
Rise Time
Delay Time
Small-Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Current-Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Base-Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc)
Base-Emitter On Voltage (IC = 10 Adc, VCE = 3.0 Vdc)
Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 40 mAdc) Collector-Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc)
DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc) DC Current Gain (IC = 20 Adc, VCE = 3.0 Vdc)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)
Collector Cutoff Current (VCE = 50 Vdc, IB = 0)
Collector-Emitter Sustaining Voltage (IC = 0.1 Adc, IB = 0)
2
tr, tf, 10 ns DUTY CYCLE = 1.0% 0 For NPN test circuit reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit
25 s
Vdc, VCC = 30 Vd IC = 10 Adc Ad IB1 = IB2 = 100 mA Duty Cycle = 1.0% yy
51
RB
D1
+ 4.0 V
Resistive Load Rii L d
Characteristic
for td and tr, D1 is disconnected and V2 = 0
8.0 k
TUT
50
VCC - 30 V
RC SCOPE
BASE
MJH6284 MJH6287
NPN MJH6284
Motorola Bipolar Power Transistor Device Data Figure 3. Darlington Schematic
COLLECTOR VCEO(sus) EMITTER VCE(sat) VBE(sat) VBE(on) Symbol S bl Symbol ICEO IEBO ICEX Cob hFE hfe fT td ts tr tf BASE NPN Min 300 750 100 100 3.5 1.0 0.3 0.1 4.0 -- -- -- -- -- -- -- -- -- -- Typical PNP MJH6287 18,000 -- PNP Max 400 600 2.0 1.0 0.3 0.1 4.0 2.8 2.0 3.0 2.0 0.5 5.0 1.0 -- -- -- COLLECTOR EMITTER mAdc mAdc mAdc MHz Unit Ui Unit Vdc Vdc Vdc Vdc pF -- -- s
MJH6284 MJH6287
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.05 0.02 0.01 SINGLE PULSE RJC(t) = r(t) RJC RJC = 0.78C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 P(pk) D = 0.5 0.2
t1
t2
DUTY CYCLE, D = t1/t2 100 200 300 500 1000
0.02 0.03
0.05
Figure 4. Thermal Response
FBSOA, FORWARD BIAS SAFE OPERATING AREA
50 IC, COLLECTOR CURRENT (AMPS) 20 10 5.0 2.0 1.0 0.5
SECOND BREAKDOWN LIMITED
0.1 ms 0.5 ms 1.0 ms 5.0 ms
dc
TJ = 150C
0.2 0.1 0.05 2.0
BONDING WIRE LIMITED THERMAL LIMITATION @TC = 25C (SINGLE PULSE)
20 50 5.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
Figure 5. MJH6284, MJH6287
50 IC, COLLECTOR CURRENT (AMPS)
FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150 _C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
40
30 DUTY CYCLE = 10% 20 L = 200 H IC/IB 100 TC = 25C VBE(off) = 0 - 5.0 V RBE = 47 0 10 20 40 80 30 100 60 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 110
10
v
0
Figure 6. Maximum RBSOA, Reverse Bias Safe Operating Area
Motorola Bipolar Power Transistor Device Data
3
MJH6284 MJH6287
NPN
3000 2000 hFE, DC CURRENT GAIN VCE = 3.0 V hFE, DC CURRENT GAIN TJ = 150C 1000 25C 500 300 200 150 0.2 0.3 0.5 - 55C 1.0 2.0 3.0 5.0 7.0 10 20 3000 2000 5000 VCE = 3.0 V TJ = 150C 25C
PNP
1000 700 500 300 0.2 - 55C
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 7. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 1.0 2.0 3.0 5.0 10 20 30 IC = 5.0 A 50 100 200 300 500 1000 IC = 10 A IC = 15 A TJ = 25C
2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 1.0 2.0 3.0 5.0 10 20 30 50 IC = 5.0 A 100 200 300 500 1000 IC = 10 A IC = 15 A
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
3.0 TJ = 25C V, VOLTAGE (VOLTS)
3.0 TJ = 25C
2.5 V, VOLTAGE (VOLTS)
2.5
2.0 VBE @ VCE = 3.0 V VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
2.0 VBE(sat) @ IC/IB = 250 1.5 VBE(on) @ VCE = 3.0 V
1.5
1.0
1.0 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 9. "On" Voltages
4
Motorola Bipolar Power Transistor Device Data
MJH6284 MJH6287
PACKAGE DIMENSIONS
C B Q E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX --- 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --- 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF INCHES MIN MAX --- 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --- 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069
U S K L
1 2
4
A
3
D V G
J H
DIM A B C D E G H J K L Q S U V
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
CASE 340D-02 ISSUE B
Motorola Bipolar Power Transistor Device Data
5
MJH6284 MJH6287
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.; SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan. 81-3-5487-8488
6
Motorola Bipolar Power Transistor Device Data MJH6284/D

▲Up To Search▲

Price & Availability of MJH6287

	To Download MJH6287 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .